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| 2SK1772 Silicon N-Channel MOS FET Application High speed power switching Features * * * * * Low on-resistance High speed switching Low drive current 4 V gate drive device - - - can be driven from 5 V source. Suitable for DC-DC converter, motor drive, power switch, solenoid drive Outline UPAK 21 4 3 D G 1. Gate 2. Drain 3. Source 4. Drain S 2SK1772 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Ratings 30 20 1 2 1 1 150 -55 to +150 Unit V V A A A W C C Notes 1. PW 10 s, duty cycle 1 % 2. When using the alumina ceramic board (12.5 x 20 x 0.7mm) 3. Marking is "HY". 2 2SK1772 Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol V(BR)DSS V(BR)GSS I GSS Min 30 20 -- -- 1.0 -- -- Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note 1. Pulse Test |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 0.6 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 0.4 0.6 1.0 85 65 20 10 15 40 30 1.2 30 Max -- -- 10 50 2.0 0.6 0.85 -- -- -- -- -- -- -- -- -- -- Unit V V A A V S pF pF pF ns ns ns ns V ns I F = 1 A, VGS = 0 I F = 1 A, VGS = 0, diF/dt = 50 A/s Test Conditions I D = 10 mA, VGS = 0 I G = 100 A, VDS = 0 VGS = 16 V, VDS = 0 VDS = 25 V, VGS = 0 I D = 1 mA, VDS = 10 V I D = 0.5 A VGS = 10 V*1 I D = 0.5 A VGS = 4 V*1 I D = 0.5 A VDS = 10 V*1 VDS = 10 V VGS = 0 f = 1 MHz I D = 0.5 A VGS = 10 V RL = 60 Zero gate voltage drain current I DSS Gate to source cutoff voltage Static drain to source on state resistance VGS(off) RDS(on) 3 2SK1772 2.0 Pch (W) Power vs. Temparature Derating Maximum Safe Operation Area 10 I D (A) 3 1 D C Operation in this area is limited by R DS(on) PW = 100 s PW O pe ra PW = 1.5 Channel Dissipation Drain Current = 1 1.0 0.3 0.1 10 m s m s tio n 0.5 0.03 0.01 0.1 Ta = 25C 0.3 1 3 10 30 100 Drain to Source Voltage V DS (V) 0 50 100 150 200 Ambient Temperature Ta (C) Typical Output Characteristics 2.0 10 V I D (A) 1.6 5V Pulse test 3.0 V Drain Current I D (A) 4V 3.5 V 1.0 Typical Transfer Characteristics VDS = 10 V Pulse test 0.8 1.2 0.6 75C 0.4 Tc = 25C -25C Drain Current 0.8 2.5 V 0.4 VGS = 2 V 0 1 2 3 Drain to Source Voltage 4 5 V DS (V) 0.2 0 1 2 3 Gate to Source Voltage 4 5 V GS (V) 4 2SK1772 Drain to Source Saturation Voltage vs. Gate to Source Voltage Drain to Source Saturation Voltage V DS(on) (V) 2.0 Pulse test Static Drain to Source on State Resistance vs. Drain Current Pulse test 5 1.6 Static Drain to Source on State Resistance R DS(on) ( ) 10 2 1 VGS = 4 V 10 V 1.2 2A 1A I D = 0.5 A 0 2 4 6 Gate to Source Voltage 8 V GS (V) 10 0.8 0.5 0.4 0.2 0.1 0.05 0.1 0.2 0.5 1 2 Drain Current I D (A) 5 Static Drain to Source on State Resistance R DS(on) ( ) 2.0 Pulse test Forward Transfer Admittance |y fs | (S) Static Drain to Source on State Resistance vs. Temperature Forward Transfer Admittance vs. Drain Current 5.0 2.0 Tc = 25C 1.0 0.5 75C -25C 1.6 1.2 2A VGS = 4 V 1A 0.5 A 2A VGS = 10 V I D = 0.5 A, 1 A 160 0.8 0.2 0.1 V DS = 10 V Pulse test 0.05 0.1 0.2 0.5 1.0 Drain Current I D (A) 2.0 0.4 0 -40 0 40 80 120 Case Temperature Tc (C) 0.05 0.02 5 2SK1772 Body-Drain Diode Reverse Recovery Time 500 Reverse Recovery Time t rr (ns) di/dt = 50 A/s VGS = 0 200 Ta = 25C 100 50 1000 Typical Capacitance vs. Drain to Source Voltage (pF) Capacitance C 100 Ciss Coss Crss 20 10 5 0.02 0.05 0.1 0.2 0.5 1.0 2.0 Reverse Drain Current I DR (A) 10 VGS = 0 f = 1 MHz 10 20 30 Drain to Source Voltage 40 50 V DS (V) 1 0 Dynamic Input Characteristics 50 V DS (V) ID = 1 A VGS VDD = 5 V 10 V 20 V VDS 16 20 Gate to Source Voltage V GS (V) Switching Characteristics 500 200 100 50 tf td(off) VGS = 10 V VDD = 30 V PW = 2 s duty 1 % Drain to Source Voltage 30 12 20 8 Switching Time t (ns) 40 20 tr 10 5 0.02 td(on) 10 0 VDD = 5 V 10V 20 V 0.8 1.6 2.4 Gate Charge Qg 4 0 4.0 3.2 (nc) 0.05 0.1 0.2 0.5 1.0 Drain Current I D (A) 2.0 6 2SK1772 Reverse Drain Current vs. Source to Drain Voltage 2.0 I DR (A) Pulse test VGS = 10 V 1.6 Reverse Drain Current 1.2 0.8 0, -5 V 0.4 0 0.4 0.8 1.2 Source to Drain Voltage 1.6 2.0 V SD (V) 7 Unit: mm 4.5 0.1 0.4 1.8 Max 1 1.5 0.1 0.44 Max (2.5) (1.5) 1.5 1.5 3.0 0.8 Min 0.44 Max Hitachi Code JEDEC EIAJ Weight (reference value) (0.4) 0.53 Max 0.48 Max 2.5 0.1 4.25 Max UPAK -- Conforms 0.050 g (0.2) Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica : http:semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic components Group Dornacher Strae 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Telex: 40815 HITEC HX Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan. |
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